TitleProduct

MgAl2O4 Crystal Substrates

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    Negotiable

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  • Total supply:

  • Delivery term:

    The date of payment from buyers deliver within days

  • seat:

    Jiangsu

  • Validity to:

    Long-term effective

  • Last update:

    2018-06-20 05:32

  • Browse the number:

    296

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MetaLaser INC
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gd201603(Mr.)  

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telephone:

phone:

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Jiangsu

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No.3, Hengda Road, Economic and Technological Development Zone, Nanjing, China

Website:

http://www.meta-laser.com/ http://gd201603.sh-triad.com/

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Description

Magnesium Aluminate (MgAl2O4 or spinel) single crystalsare widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. MgAl2O4 is an attractive material for uses in a wide range of optical, electronic and structural applications including windows and lenses, which require excellent transmission from the visible through to the mid IR. Theoretical transmission is very uniform and approaches 87% between 0.3 to 5 microns. Transmission characteristics rival that of ALON and sapphire in the mid-wave IR, making it especially attractive for the ever-increasing performance requirements of current and next-generation IR imaging systems.

It is also found that MgAl2O4 is a good substrate for III-V nitrides device. Spinel (MgAl2O4) is one candidate for such GaN LDs substrate. The crystallographic structure of MgAl2O4 is a spinel type (Fd3m), and its lattice constant is 8.083A. MgAl2O4 is a relatively low-cost substrate material, which has been successfully applied to the growth of high quality GaN films. MgAl2O4 is cleaved on the (100) plane. GaN LD cavities have been obtained by simply cleaving MgAl2O4 substrates along the (100) direction, which will also work well for ZnO. MgAl2O4 crystal is very difficult to grow, due to the difficulty in maintaining a single phase structure.

Features

good optical, chemical and thermal properties

good high temperature properties

stable physical performance

Applications

MgAl2O4 substrate

Main Specification

Materials

MgAl2O4

Orientation

[100] or [100] or [111] < ±0.5°

Parallel

10〞

Perpendicular

surface Quality

10/5

Wavefront Distortion

λ/4 @632nm

Surface Flatness

λ/8 @632nm

Clear Aperture

>95%

Chamfer

<0.1×45°

Thickness/Diameter Tolerance

±0.05 mm

Maximum dimensions

dia 50×100mm

Coatings

AR/AR@940+1030;HR@1030+HT@940+AR1030;

Material characteristics

Physical and chemicalcharacteristics

Chemical formula

MgAl2O4

Crystal structure

cubic: m3m 

Lattice parameters, Å

a = 8.083 Å  

Melting Point(℃)

2130°C    

Density, g/cm3

3.61 g/cm3  

Transmission Range  

0.21 ~ 5.3 µm  

Refractive index

1.8245 @0.8 µm,   

Mohs hardness

8

Thermal conductivity at 25°C, Wxcm-1xK-1

14.0 W/(m·K)

Thermal expansion coefficient

7.45×10-6/K  

Phase Velocity

6500 m/s at (100) shear wave

Propagation loss

6.5 dB/ms

Specific Heat

0.59 W.s/g/K


Standard product


Orientation

End configuration, nm

Thickness, nm

Refractive index

[1 0 0]

5×5

0.5

1.8245@0.8 µm

[1 1 0]

[1 1 1]

[1 0 0]

1

[1 1 0]

[1 1 1]

[1 0 0]

10×10

0.5

[1 1 0]

[1 1 1]

[1 0 0]

1

[1 1 0]

[1 1 1]

[1 0 0]

15×15

0.5

[1 1 0]

[1 1 1]

[1 0 0]

1

[1 1 0]

[1 1 1]

[1 0 0]

20×20

0.5

[1 1 0]

[1 1 1]

[1 0 0]

1

[1 1 0]

[1 1 1]

[1 0 0]

dia 25.4

0.5

[1 1 0]

[1 1 1]

[1 0 0]

1

[1 1 0]

[1 1 1]

[1 0 0]

dia 50.8

0.5

[1 1 0]

[1 1 1]

[1 0 0]

1

[1 1 0]

[1 1 1]



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